This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

STD2HNK60Z +BOM

Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD2HNK60Z
Datasheet:

STD2HNK60Z Datasheet (PDF)
Series:

SuperMESH™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

600 V
EDA/CAD Models:

Request Free CAD Models for STD2HNK60Z

STD2HNK60Z General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Key Features

100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected

Specifications

Series	SuperMESH™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.8Ohm @ 1A, 10V	Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V	Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V	Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD2HNK60