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See Technical Specifications

STD2N62K3 +BOM

N-channel 620 V, 3 Ohm typ., 2.2 A SuperMESH3(TM) Power MOSFET in DPAK package

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD2N62K3
Datasheet:

STD2N62K3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for STD2N62K3

STD2N62K3 General Description

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

Key Features

High-performance semiconductor
Reliable operation ensured always
Precise control technology applied

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	620 V
Id - Continuous Drain Current	2.2 A	Rds On - Drain-Source Resistance	3.6 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	15 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	45 W
Channel Mode	Enhancement	Tradename	MDmesh
Series	STD2N62K3	Configuration	Single
Fall Time	22 ns	Product Type	MOSFET
Rise Time	4.4 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	21 ns	Typical Turn-On Delay Time	8 ns
Unit Weight	0.011640 oz