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See Technical Specifications

STD30PF03LT4 +BOM

Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD30PF03LT4
Datasheet:

STD30PF03LT4 Datasheet (PDF)
Series:

STripFET™ II
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for STD30PF03LT4

STD30PF03LT4 General Description

The STD30PF03LT4 MOSFET is a versatile component that meets the needs of modern electronic applications requiring precision control and high power handling capability. Its 1-Element design simplifies circuit layout and reduces component count, saving valuable board space and cost. With a threshold voltage of -2V, this MOSFET ensures reliable operation across a wide range of input voltages, making it a versatile choice for diverse power management tasks

Key Features

Standard outline for easy automated surface
mount assembly
Low threshold device
Low gate charge

Application

SWITCHING

Specifications

Series	STripFET™ II	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 12A, 10V	Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 25 V	Power Dissipation (Max)	70W (Tc)
Operating Temperature	175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD30