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STD40NF10 +BOM

N-channel 100 V, 0.025 Ohm typ., 50 A STripFET II Power MOSFET in a DPAK package

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD40NF10
Datasheet:

STD40NF10 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for STD40NF10

STD40NF10 General Description

Ideal for high-power applications, the STD40NF10 Power MOSFET transistor from STMicroelectronics boasts a range of impressive features. With a drain-source voltage rating of 100V and a continuous drain current capability of 40A, this transistor is well-equipped to handle the demands of power supplies, motor control, and automotive systems. Its low on-resistance of 0.042 ohms and gate threshold voltage of 4V contribute to minimizing power losses and enhancing efficiency in high-current and low-voltage control circuits. Furthermore, the TO-220 package ensures reliable housing and efficient heat dissipation, making it a solid choice for robust and high-performance applications

Key Features

Exceptional dv/dt capability
100% avalanche tested
Low gate charge

Application

Power Management
Industrial

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	50 A	Rds On - Drain-Source Resistance	28 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	62 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	125 W
Channel Mode	Enhancement	Tradename	STripFET
Series	STD40NF10	Configuration	Single
Fall Time	13 ns	Height	2.4 mm
Length	6.6 mm	Product Type	MOSFET
Rise Time	46 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	54 ns	Typical Turn-On Delay Time	21 ns
Width	6.2 mm	Unit Weight	0.011640 oz