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See Technical Specifications

STD5NM60-1 +BOM

Suitable for use in TO-251 (IPAK) packages

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD5NM60-1
Datasheet:

STD5NM60-1 Datasheet (PDF)
Series:

MDmesh™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

600 V
EDA/CAD Models:

Request Free CAD Models for STD5NM60-1

STD5NM60-1 General Description

The STD5NM60-1 MOSFET transistor from STMicroelectronics is a powerhouse component designed for high-voltage and high-current applications. With its impressive 600V drain-source voltage rating and 5A continuous drain current rating, this transistor is capable of handling demanding power management tasks with ease. Its low on-resistance of 1.25 ohms ensures efficient operation, while the gate-source threshold voltage of 3V provides precise control over the switching mechanism

Specifications

Series	MDmesh™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V	Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V	Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	STD5NM60