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STD6N62K3 +BOM

N-channel 620 V, 950 mOhm, 5.5 A SuperMESH3 K3 Power MOSFET in a DPAK package

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD6N62K3
Datasheet:

STD6N62K3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for STD6N62K3

STD6N62K3 General Description

The STD6N62K3 is a robust N-channel power MOSFET manufactured by STMicroelectronics for efficient power management applications. With a high drain-source voltage rating of 620 volts and a maximum continuous drain current of 6.1 amperes, this MOSFET is well-suited for high-voltage applications that demand reliable and efficient power handling capabilities. As part of STMicroelectronics' STPOWER family, it offers superior performance and meets the stringent requirements of various power management applications. The "K3" suffix in its part number denotes specific variations or enhancements in its design or packaging, providing engineers with options to address different application needs

Key Features

Fully encapsulated package
High surge current capability
Low leakage current

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	5.5 A	Rds On - Drain-Source Resistance	1.28 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	34 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	90 W
Channel Mode	Enhancement	Tradename	MDmesh
Series	STD6N62K3	Configuration	Single
Fall Time	19 ns	Height	2.4 mm
Length	6.6 mm	Product Type	MOSFET
Rise Time	12.5 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	27 ns	Typical Turn-On Delay Time	13 ns
Width	6.2 mm	Unit Weight	0.011640 oz