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STD6NK50ZT4 +BOM

Low on-state resistance of 1.2Ω at 10V voltage bias

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD6NK50ZT4
Datasheet:

STD6NK50ZT4 Datasheet (PDF)
Series:

SuperMESH™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

500 V
EDA/CAD Models:

Request Free CAD Models for STD6NK50ZT4

STD6NK50ZT4 General Description

The STD6NK50ZT4 is a N-CHANNEL 500V-0.93 OHM-5.6A DPAK, ZENER-PROTECTED SUPERMESH MOSFET Power Field-Effect Transistor. This high-performance transistor is designed for applications requiring high voltage and current capability. With a maximum current rating of 5.6A and a voltage rating of 500V, this transistor is suitable for a wide range of power supply, motor control, and electronic switching applications

Key Features

Maximum drain-source voltage: 500V
Maximum drain current: 5.6A
Package: DPAK (Dual Flat No-Lead)
Low on-resistance
Low gate charge
Low input capacitance
High speed switching

Application

SWITCHING

Specifications

Series	SuperMESH™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.8A, 10V	Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	24.6 nC @ 10 V	Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 25 V	Power Dissipation (Max)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD6NK50