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STD7NK40ZT4 +BOM

N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in DPAK package

STD7NK40ZT4 General Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Key Features

  • Micropower consumption guaranteed
  • Minimal distortion in signals
  • High-quality materials used

Application

  • Power Management
  • Lighting
  • Industrial

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 400 V
Id - Continuous Drain Current 5.4 A Rds On - Drain-Source Resistance 1 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 26 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 70 W
Channel Mode Enhancement Tradename SuperMESH
Series STD7NK40ZT4 Configuration Single
Fall Time 12 ns Forward Transconductance - Min 3.5 S
Height 2.4 mm Length 6.6 mm
Product Type MOSFET Rise Time 15 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 15 ns
Width 6.2 mm Unit Weight 0.011640 oz

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