This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

STD9N60M2 +BOM

MOSFET with N-channel configuration, capable of handling up to 600V voltage, featuring 0

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD9N60M2
Datasheet:

STD9N60M2 Datasheet (PDF)
Series:

MDmesh™ II Plus
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

600 V
EDA/CAD Models:

Request Free CAD Models for STD9N60M2

STD9N60M2 General Description

With its use of MDmesh™ M2 technology, the STD9N60M2 stands out as a reliable N-channel Power MOSFET. Its carefully designed strip layout and improved vertical structure result in low on-resistance and superior switching performance, making it a suitable choice for high-efficiency converters in demanding applications

Key Features

Fast recovery time
Excellent voltage tolerance
High surge immunity

Specifications

Series	MDmesh™ II Plus	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	780mOhm @ 3A, 10V	Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V	Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	320 pF @ 100 V	Power Dissipation (Max)	60W (Tc)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD9