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See Technical Specifications

STD9NM60N +BOM

N-channel 600 V, 0.63 Ohm, 6.5 A DPAK MDmesh(TM) II Power MOSFET

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD9NM60N
Datasheet:

STD9NM60N Datasheet (PDF)
Series:

MDmesh™ II
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

600 V
EDA/CAD Models:

Request Free CAD Models for STD9NM60N

STD9NM60N General Description

In conclusion, the STD9NM60N stands out as a reliable and efficient solution for high-speed switching applications, offering a blend of high performance, low power losses, and ease of installation. Its impressive specifications make it a versatile choice for various projects that prioritize energy efficiency and reliable operation

Key Features

Reduced gate charge for minimized switching losses
Enhanced power and temperature cycling capabilities
Excellent thermal management for reliable performance
Compact TO-252 package for easy mounting

Specifications

Series	MDmesh™ II	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	6.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	745mOhm @ 3.25A, 10V	Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.4 nC @ 10 V	Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	452 pF @ 50 V	Power Dissipation (Max)	70W (Tc)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD9