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See Technical Specifications

STY100NS20FD +BOM

200V Power MOSFET

Manufacturer:

Stmicroelectronics
Mfr.Part #:

STY100NS20FD
Datasheet:

STY100NS20FD Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel

STY100NS20FD General Description

With a gate-source voltage (VGS) of ±20V and a gate charge of 162nC, the STY100NS20FD enables fast switching speeds, enhancing its overall efficiency and responsiveness in industrial environments. Its robust construction and advanced features make it a valuable component in high-power applications, ensuring reliable and consistent performance

Key Features

Fast switching speed and high efficiency
Low inductance and capacitance for fast turn-on
Precise current sensing for stable operation
Durable construction for long lifespan

Application

Power converters for EVs
Renewable energy systems
Industrial motor drives

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	100 A	Rds On - Drain-Source Resistance	24 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	450 W
Channel Mode	Enhancement	Series	STY100NS20FD
Configuration	Single	Fall Time	140 ns
Height	20.3 mm	Length	15.9 mm
Product Type	MOSFET	Rise Time	140 ns
Factory Pack Quantity	600	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-On Delay Time	42 ns	Width	5.3 mm
Unit Weight	0.172842 oz