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See Technical Specifications

T2N7002AK,LM +BOM

The T2N7002AK,LM MOSFET is null when not conducting current

N-Channel 60 V 200mA (Ta) 320mW (Ta) Surface Mount SOT-23-3

Source Content uid	T2N7002AK,LM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
Factory Lead Time	32 Weeks	Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	0.2 A
Drain-source On Resistance-Max	4.7 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	0.7 pF	JESD-30 Code	R-PDSO-G3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	1 W
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Series	U-MOSVII-H
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	3.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	0.35 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	17 pF @ 10 V
Power Dissipation (Max)	320mW (Ta)	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	T2N7002