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TGF2979-SM +BOM

Field-effect transistor TGF2979-SM for radio frequency power amplification

Manufacturer:

qorvo
Mfr.Part #:

TGF2979-SM
Datasheet:

TGF2979-SM Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN SiC
Operating Frequency:

DC to 12 GHz
EDA/CAD Models:

Request Free CAD Models for TGF2979-SM

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Product Category	RF JFET Transistors	Shipping Restrictions	This product may require additional documentation to export from the United States.
Transistor Type	HEMT	Technology	GaN SiC
Operating Frequency	DC to 12 GHz	Gain	11 dB
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	32 V
Vgs - Gate-Source Breakdown Voltage	- 2.7 V	Id - Continuous Drain Current	1.8 A
Output Power	22 W	Maximum Operating Temperature	+ 225 C
Pd - Power Dissipation	49 W	Mounting Style	SMD/SMT
Configuration	Single	Development Kit	TGF2979-SMEVB1
Height	0.203 mm	Length	4 mm
Moisture Sensitive	Yes	Number of Channels	1 Channel
Product	RF JFET Transistors	Product Type	RF JFET Transistors
Series	TGF2979	Factory Pack Quantity	50
Subcategory	Transistors	Type	GaN SiC HEMT
Width	3 mm	Part # Aliases	TGF2979 1127378
Unit Weight	0.004339 oz