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UF4C120070K4S +BOM

MOSFET 1200V/70mOhm, N-Off SiC CASCODE, G4 FAST, TO-247-4L, REDUCED RTH

UF4C120070K4S General Description

N-Channel 1200 V 27.5A (Tc) 217W (Tc) Through Hole TO-247-4

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Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1.2 kV
Id - Continuous Drain Current 27.5 A Rds On - Drain-Source Resistance 91 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 6 V
Qg - Gate Charge 37.8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 217 W
Channel Mode Depletion Product Type MOSFET
Factory Pack Quantity 30 Subcategory MOSFETs

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