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UF3C065030B3 +BOM

Silicon Carbide FET with 650V and 27mΩ

Manufacturer:

QORVO
Mfr.Part #:

UF3C065030B3
Datasheet:

UF3C065030B3 Datasheet (PDF)
FET Type:

N-Channel
Drain To Source Voltage (Vdss):

650 V
Current - Continuous Drain (Id) @ 25°C:

65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):

12V
EDA/CAD Models:

Request Free CAD Models for UF3C065030B3

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UF3C065030B3 General Description

The UF3C065030B3 is a cutting-edge silicon carbide (SiC) FET power module, meticulously engineered for optimal performance in high-efficiency power conversion applications. With its innovative half-bridge configuration comprising three integrated SiC power transistors, this module facilitates efficient switching and significantly reduces switching losses. Its 650V rated voltage and continuous 30A current rating make it a versatile solution for various power electronics applications, including inverters, motor drives, and power supplies. Boasting a low on-resistance of 65mΩ, the UF3C065030B3 effectively minimizes conduction losses and enhances overall efficiency, ensuring cost-effective and sustainable operation

Specifications

FET Type	N-Channel	Technology	-
Drain to Source Voltage (Vdss)	650 V	Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V	Rds On (Max) @ Id, Vgs	35mOhm @ 40A, 12V
Vgs(th) (Max) @ Id	6V @ 10mA	Gate Charge (Qg) (Max) @ Vgs	51 nC @ 15 V
Vgs (Max)	±25V	Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 100 V
FET Feature	-	Power Dissipation (Max)	242W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount