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See Technical Specifications

UF3C120040K3S +BOM

P-Channel 1200 V 65A Through Hole TO-247-3

Manufacturer:

Qorvo
Mfr.Part #:

UF3C120040K3S
Datasheet:

UF3C120040K3S Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for UF3C120040K3S

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UF3C120040K3S General Description

This cascode MOSFET distinguishes itself with a remarkably low on-state resistance of 75 mΩ and a gate charge of 43 nC, enabling rapid switching and minimized power dissipation. Moreover, its high avalanche energy rating of 33 mJ sets a new standard for resilience under transient conditions, guaranteeing uninterrupted operation even in the face of high-energy spikes. From power supplies to electric vehicles, the UF3C120040K3S excels in a plethora of applications thanks to its rugged design and adherence to industry standards

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	65 A	Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	51 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	429 W
Channel Mode	Enhancement	Tradename	SiC FET
Series	UF3C	Configuration	Single
Product Type	MOSFET	Factory Pack Quantity	30
Subcategory	MOSFETs	Unit Weight	0.211644 oz