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2SJ668(TE16L1,NQ) +BOM

New Power MOSFET P-Channel Transistor 60V 5A 3-Pin Surface Mount

Manufacturer:

Toshiba Semiconductor and Storage
Mfr.Part #:

2SJ668(TE16L1,NQ)
Datasheet:

2SJ668(TE16L1,NQ) Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

5A (Ta)

2SJ668(TE16L1,NQ) General Description

Safety is a top priority with the 2SJ668, as it comes equipped with a built-in diode for reverse bias protection. This feature safeguards the device from potential damage, enhancing overall reliability in various operating environments. Furthermore, the 2SJ668 is RoHS compliant, underscoring its environmentally friendly design and suitability for a wide range of applications

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Rds On (Max) @ Id, Vgs	170mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 10 V
FET Feature	-	Power Dissipation (Max)	20W (Tc)
Operating Temperature	150°C	Mounting Type	Surface Mount
Series	U-MOSIII	Base Product Number	2SJ668