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See Technical Specifications

2SK3265 +BOM

Discontinued on 08-10, phased out on 11-01, obsolete on 11-04

Manufacturer:

Toshiba
Mfr.Part #:

2SK3265
Datasheet:

2SK3265 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2SK3265

2SK3265 General Description

Whether you are designing a robust audio amplifier or a high-powered power supply, the 2SK3265 power FET delivers the performance and durability required for demanding applications. Its combination of high voltage and current ratings, low on-resistance, easy control characteristics, and built-in protection features make it a go-to choice for engineers looking to enhance the efficiency and reliability of their designs. Trust the 2SK3265 to handle your high-power needs with precision and peace of mind

Key Features

Superior noise immunity
Low distortion output stage
Compact size package

Application

Power supply usage
Motor control systems
Voltage regulation

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	700 V
Id - Continuous Drain Current	10 A	Rds On - Drain-Source Resistance	1 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	45 W
Channel Mode	Enhancement	Series	2SK3265
Configuration	Single	Fall Time	42 ns
Height	15.1 mm	Length	10.16 mm
Product Type	MOSFET	Rise Time	40 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.45 mm
Unit Weight	0.068784 oz