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ALD1106PBL +BOM

Four-terminal MOSFET with 10.6V voltage and 14DIP package

ALD1106PBL General Description

Mosfet Array 10.6V 500mW Through Hole 14-PDIP

Key Features

  • Low threshold voltage of 0.7V
  • Low input capacitance
  • Low Vos 2mV typical
  • High input impedance -- 1014Ω typical
  • Negative current (IDS) temperature coefficient
  • Enhancement-mode (normally off)
  • DC current gain 109
  • Low input and output leakage currents
  • RoHS compliant

Specifications

Technology MOSFET (Metal Oxide) Configuration 4 N-Channel, Matched Pair
FET Feature - Drain to Source Voltage (Vdss) 10.6V
Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 5V
Vgs(th) (Max) @ Id 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 3pF @ 5V Power - Max 500mW
Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole

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