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ALD212902PAL +BOM

MOSFET Dual N-Ch Matched Pr VGS=0.0V

ALD212902PAL General Description

Mosfet Array 10.6V 80mA 500mW Through Hole 8-PDIP

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 10 V
Id - Continuous Drain Current 79 mA Rds On - Drain-Source Resistance 14 Ohms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 180 mV
Qg - Gate Charge - Minimum Operating Temperature 0 C
Maximum Operating Temperature + 70 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Tradename EPAD
Series ALD212902P Configuration Dual
Product Type MOSFET Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 10 ns
Unit Weight 0.032805 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $13.670 $13.67
200+ $5.455 $1,091.00
500+ $5.273 $2,636.50
1000+ $5.183 $5,183.00

The prices below are for reference only.

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