This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ALD110900APAL +BOM

MOSFET Dual EPAD(R) N-Ch

Manufacturer:

Advanced Linear Devices
Mfr.Part #:

ALD110900APAL
Datasheet:

ALD110900APAL Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for ALD110900APAL

Mosfet Array 10.6V 500mW Through Hole 8-PDIP

Product Category	MOSFET	Shipping Restrictions	This product may require additional documentation to export from the United States.
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	10 V	Id - Continuous Drain Current	12 mA
Rds On - Drain-Source Resistance	500 Ohms, 500 Ohms	Vgs - Gate-Source Voltage	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage	0 V	Qg - Gate Charge	-
Minimum Operating Temperature	0 C	Maximum Operating Temperature	+ 70 C
Pd - Power Dissipation	500 mW	Channel Mode	Depletion
Series	ALD110900A	Configuration	Dual
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	10 ns	Typical Turn-On Delay Time	10 ns
Unit Weight	0.032805 oz