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ALD210808PCL +BOM

MOSFET Quad N-Ch Matched Pr VGS=0.0V

ALD210808PCL General Description

Mosfet Array 10.6V 80mA 500mW Through Hole 16-PDIP

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 4 Channel Vds - Drain-Source Breakdown Voltage 10.6 V
Id - Continuous Drain Current 80 mA Rds On - Drain-Source Resistance 25 Ohms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 820 mV
Qg - Gate Charge - Minimum Operating Temperature 0 C
Maximum Operating Temperature + 70 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Tradename EPAD
Series ALD210808P Configuration Quad
Product Type MOSFET Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 4 N-Channel
Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 10 ns
Unit Weight 0.036156 oz

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