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BUF410A +BOM

Power Bipolar Transistor

BUF410A General Description

Bipolar (BJT) Transistor NPN 450 V 15 A 125 W Through Hole TO-247-3

Key Features

  • Sustainable manufacturing process employed
  • Eco-friendly packaging options available
  • Durable product longevity ensured
  • Full range of accessories and tools provided

Application

  • High quality amplifiers
  • Industrial controllers
  • Robotics applications

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 450 V Collector- Base Voltage VCBO 1 kV
Emitter- Base Voltage VEBO 7 V Maximum DC Collector Current 15 A
Pd - Power Dissipation 125 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series BUF410A
Continuous Collector Current 15 A Height 20.15 mm
Length 15.75 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 30 Subcategory Transistors
Technology Si Width 5.15 mm
Unit Weight 0.229281 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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