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See Technical Specifications

BUH1015HI +BOM

BUH1015HI belongs to the Bipolar Junction Transistor (BJT) family

Manufacturer:

Onsemi
Mfr.Part #:

BUH1015HI
Datasheet:

BUH1015HI Datasheet (PDF)
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

700 V
Collector- Base Voltage VCBO:

1.5 kV
EDA/CAD Models:

Request Free CAD Models for BUH1015HI

BUH1015HI General Description

Housed in a TO-220 package, the BUH1015HI offers not only easy mounting on a heat sink for effective heat dissipation but also robust thermal conductivity for optimal performance. Its wide operating temperature range of -55°C to 150°C makes it a reliable choice for harsh industrial environments, where durability is key. Additionally, this transistor has a high pulse capability of 40A, allowing it to handle short-term overloads without risk of damage, ensuring reliable operation under varying conditions

Key Features

Low on-resistance
Improved temperature range
ESD protected design
Pulse width modulation

Application

Smart appliance control
Efficient power usage

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	700 V
Collector- Base Voltage VCBO	1.5 kV	Emitter- Base Voltage VEBO	10 V
Maximum DC Collector Current	14 A	Pd - Power Dissipation	70 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	7 at 10 A, 5 V	Product Type	BJTs - Bipolar Transistors
Subcategory	Transistors	Technology	Si