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BJT ROHS compliant design ensures quality and safety compliance for your applications
TO-3-2Manufacturer:
Tt Electronics
Mfr.Part #:
BUR52
Datasheet:
REACH:
Details
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
EDA/CAD Models:
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DESCRIPTIONThe BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.■ SGS-THOMSON PREFERRED SALESTYPE■ NPN TRANSISTOR■ MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVEAPPLICATIONS■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
Product Category | Bipolar Transistors - BJT | REACH | Details |
Mounting Style | Through Hole | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 250 V |
Collector- Base Voltage VCBO | 350 V | Emitter- Base Voltage VEBO | 10 V |
Collector-Emitter Saturation Voltage | 1.5 V | Maximum DC Collector Current | 80 A |
Pd - Power Dissipation | 350 W | Gain Bandwidth Product fT | 16 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Continuous Collector Current | 60 A | DC Collector/Base Gain hfe Min | 20 at 5 A, 4 V |
DC Current Gain hFE Max | 100 at 5 A, 4 V | Height | 9.15 mm |
Length | 39.12 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 10 | Subcategory | Transistors |
Technology | Si | Width | 26.67 mm |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $4.668 | $4.67 |
200+ | $1.806 | $361.20 |
500+ | $1.745 | $872.50 |
1000+ | $1.712 | $1,712.00 |
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