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See Technical Specifications

BUV61 +BOM

Si-based power transistor offering high current handlin

Manufacturer:

Onsemi
Mfr.Part #:

BUV61
Datasheet:

BUV61 Datasheet (PDF)
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

200 V
Collector- Base Voltage VCBO:

300 V
EDA/CAD Models:

Request Free CAD Models for BUV61

BUV61 General Description

Housed in a TO-3 case style, the BUV61 offers a robust and compact form factor, facilitating easy integration into various circuit designs. Its RoHS compliance underscores its commitment to environmental sustainability, meeting stringent regulatory standards while delivering exceptional performance

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	200 V
Collector- Base Voltage VCBO	300 V	Emitter- Base Voltage VEBO	7 V
Maximum DC Collector Current	50 A	Pd - Power Dissipation	250 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si