This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

BUZ32 +BOM

MOSFET N-Ch 200V 9.5A TO220-3

Manufacturer:

Infineon
Mfr.Part #:

BUZ32
Datasheet:

BUZ32 Datasheet (PDF)
Technology:

GaN
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for BUZ32

BUZ32 General Description

With its TO-220AB package and 3-pin configuration, the BUZ32 is easy to install and integrate into electronic circuit designs. The green plastic housing not only provides electrical insulation but also adds a splash of color to your projects

Specifications

Product Category	MOSFET	Technology	GaN
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	9.5 A	Rds On - Drain-Source Resistance	400 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	75 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	30 ns	Height	15.65 mm
Length	10 mm	Product Type	MOSFET
Rise Time	40 ns	Factory Pack Quantity	500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	55 ns	Typical Turn-On Delay Time	10 ns
Width	4.4 mm	Part # Aliases	BUZ32XK
Unit Weight	0.068784 oz