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BUZ72A +BOM

High-power Si MOSFET for demanding application

Key Features

  • 9A, 100V
  • rDS(ON) = 0.250Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature
  • -TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 9 A Rds On - Drain-Source Resistance 250 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 40 W
Channel Mode Enhancement Configuration Single
Fall Time 55 ns Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 45 ns Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 20 ns Width 4.7 mm
Unit Weight 0.068784 oz

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