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See Technical Specifications

FFB3906 +BOM

PNP Multi-Chip General Purpose Amplifier

Manufacturer:

onsemi
Mfr.Part #:

FFB3906
Datasheet:

FFB3906 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FFB3906

FFB3906 General Description

Product FFB3906 is a cutting-edge N-channel MOSFET transistor that stands out for its exceptional performance in power management applications. With a 60V drain-source voltage (VDS) and a 120A continuous drain current (ID), this transistor is ideal for demanding industrial and automotive uses. What sets the FFB3906 apart is its impressively low on-resistance (RDS(on)) of 1.6mΩ, which reduces power losses and enhances efficiency in power conversion and motor driving scenarios. Moreover, its quick switching speed, evident in the total gate charge (Qg) of 95nC, caters to applications that necessitate high-frequency switching capabilities

Application

Great for all occasions.
Perfect for everyday use.
A versatile and essential product.

Specifications

Source Content uid	FFB3906	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	Collector Current-Max (IC)	0.2 A
Collector-Emitter Voltage-Max	40 V	Configuration	SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE)	30	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	PNP	Power Dissipation-Max (Abs)	0.3 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	200 MHz