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See Technical Specifications

HFA3127RZ +BOM

RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-QFN (3x3)

Manufacturer:

Renesas Technology Corp
Mfr.Part #:

HFA3127RZ
Datasheet:

HFA3127RZ Datasheet (PDF)
Transistor Type:

5 NPN
Voltage - Collector Emitter Breakdown (Max):

12V
Frequency - Transition:

8GHz
Noise Figure (dB Typ @ F):

3.5dB @ 1GHz

HFA3127RZ General Description

Design engineers seeking an efficient and reliable solution for RF amplifiers can refer to application note AN9315 for guidance on utilizing these transistor arrays effectively. With their advanced features and high-performance capabilities, the HFA3046, HFA3096, HFA3127, and HFA3128 series represent the forefront of UHF transistor technology, delivering superior results in high-frequency applications

Key Features

High-frequency operation . . . . . . . . . . . . . . . . . . .
Safe operating area (SOA) monitoring
Noise figure reduction technique employed
Precise timing and control available
Low noise output stage guaranteed
Dual NPN/PNP transistor configuration

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors	Series	-
Transistor Type	5 NPN	Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz	Noise Figure (dB Typ @ f)	3.5dB @ 1GHz
Gain	-	Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 2V	Current - Collector (Ic) (Max)	65mA
Operating Temperature	175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	HFA3127