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HFA3128RZ +BOM
3X3 Millimeter Size
QFN EP-
Manufacturer:
RENESAS ELECTRONICS CORP
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Mfr.Part #:
HFA3128RZ
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Datasheet:
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Pbfree Code:
Yes
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Part Life Cycle Code:
Obsolete
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Pin Count:
16
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Reach Compliance Code:
compliant
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EDA/CAD Models:
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Availability: 7072 PCS
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HFA3128RZ General Description
Support is limited to customers who have already adopted these products.
The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.
Key Features
- Compact package with reduced board space
- Pin-to-pin compatible with industry standard arrays
- Limited current output: ±20mA
Specifications
Source Content uid | HFA3128RZ | Pbfree Code | Yes |
Part Life Cycle Code | Obsolete | Pin Count | 16 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Additional Feature | LOW NOISE | Collector-Emitter Voltage-Max | 8 V |
Configuration | SEPARATE, 5 ELEMENTS | Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code | S-PQCC-N16 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 2 | Number of Elements | 5 |
Number of Terminals | 16 | Polarity/Channel Type | PNP |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | NO LEAD | Terminal Position | QUAD |
Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 5500 MHz | Product Category | RF Bipolar Transistors |
Series | HFA3128 | Transistor Type | Bipolar |
Technology | Si | Transistor Polarity | PNP |
Operating Frequency | 5.5 GHz | DC Collector/Base Gain hfe Min | 20 |
Collector- Emitter Voltage VCEO Max | 8 V | Emitter- Base Voltage VEBO | 5.5 V |
Continuous Collector Current | 65 mA | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 125 C | Collector- Base Voltage VCBO | 12 V |
DC Current Gain hFE Max | 20 at 10 mA at 2 V | Gain Bandwidth Product fT | 5500 MHz (Typ) |
Height | 0.9 mm | Length | 3 mm |
Maximum DC Collector Current | 65 mA | Moisture Sensitive | Yes |
Pd - Power Dissipation | 150 mW | Product Type | RF Bipolar Transistors |
Factory Pack Quantity | 100 | Subcategory | Transistors |
Type | RF Bipolar Small Signal | Width | 3 mm |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,072
Minimum Order: 1
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