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See Technical Specifications

HFA3046BZ +BOM

Transistor NPN 8V 0.065A 14-Pin SOIC N

Manufacturer:

Renesas Electronics Corporation
Mfr.Part #:

HFA3046BZ
Datasheet:

HFA3046BZ Datasheet (PDF)
Transistor Type:

5 NPN
Voltage - Collector Emitter Breakdown (Max):

12V
Frequency - Transition:

8GHz
Noise Figure (dB Typ @ F):

3.5dB @ 1GHz

HFA3046BZ General Description

The HFA3046BZ is a versatile ultra-high frequency transistor array that offers a range of applications for high-frequency amplifier and mixer needs. With five dielectrically isolated transistors on a common substrate, this array provides a convenient and efficient solution for various electronic designs. The NPN transistors in this array boast an impressive f_T of 8GHz, while the PNP transistors offer a respectable f_T of 5.5GHz. These specifications, combined with low noise of 3.5dB, make the HFA3046BZ an excellent choice for demanding RF applications

Key Features

High frequency performance
Silicon germanium construction
NPN and PNP transistor pairs
Low noise figure operation
Pin compatible design flexibility
Rozhdestvenskay compliant materials

Specifications

Transistor Type	5 NPN	Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz	Noise Figure (dB Typ @ f)	3.5dB @ 1GHz
Power - Max	150mW	DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 2V
Current - Collector (Ic) (Max)	65mA	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	HFA3046