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See Technical Specifications

HFA3096BZ +BOM

Ultra High Frequency Transistor Arrays

Manufacturer:

Renesas Electronics Corporation
Mfr.Part #:

HFA3096BZ
Datasheet:

HFA3096BZ Datasheet (PDF)
Transistor Type:

3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max):

12V, 15V
Frequency - Transition:

8GHz, 5.5GHz
Noise Figure (dB Typ @ F):

3.5dB @ 1GHz

HFA3096BZ General Description

Among the other transistor arrays in this lineup, the HFA3096 stands out as a unique NPN-PNP combination. This allows for even greater flexibility in design and application, as both types of transistors are available on a single substrate. Access to each individual transistor terminal further enhances the versatility of this array, enabling users to maximize its performance in their specific applications

Key Features

Pin-compatible with industry standard arrays . . . . . . . . . . .
No signal degradation . . . . . . . . . . . . . . . . . . . . . . . .
Suitable for high-reliability applications . . . . . . . . . . . . . . . .

Specifications

Transistor Type	3 NPN + 2 PNP	Voltage - Collector Emitter Breakdown (Max)	12V, 15V
Frequency - Transition	8GHz, 5.5GHz	Noise Figure (dB Typ @ f)	3.5dB @ 1GHz
Power - Max	150mW	DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 2V / 20 @ 10mA, 2V
Current - Collector (Ic) (Max)	65mA	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	HFA3096