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HFA3096 +BOM

Semiconductor devices for signal processing

Key Features

  • NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
  • NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
  • NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
  • PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
  • PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 60
  • PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
  • Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
  • Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
  • Complete Isolation Between Transistors
  • Pin Compatible with Industry Standard 3XXX Series
  • Arrays

Specifications

Product Category Bipolar Transistors - BJT Transistor Polarity NPN, PNP
Configuration Quint Collector- Emitter Voltage VCEO Max 8 V
Collector- Base Voltage VCBO 12 V Emitter- Base Voltage VEBO 5.5 V
Maximum DC Collector Current 65 mA Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 8 GHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 125 C DC Collector/Base Gain hfe Min 40 at 10 mA, 2 V
Height 1.5 mm Length 10 mm
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si Width 4 mm
Unit Weight 0.023492 oz

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