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HFA3128B96 +BOM

Bipolar Transistors - BJT

HFA3128B96 General Description

RF Transistor 5 PNP 8V 65mA 5.5GHz 150mW Surface Mount 16-SOIC

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Renesas Technology Corp Inventory

Specifications

Product Category: Bipolar Transistors - BJT Transistor Polarity: PNP
Configuration: Quint Collector- Emitter Voltage VCEO Max: 8 V
Collector- Base Voltage VCBO: 12 V Emitter- Base Voltage VEBO: 5.5 V
Maximum DC Collector Current: 65 mA Pd - Power Dissipation: 150 mW
Gain Bandwidth Product fT: 5.5 GHz Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 125 C DC Collector/Base Gain hfe Min: 20 at 10 mA, 2 V
Height: 1.5 mm Length: 10 mm
Product Type: BJTs - Bipolar Transistors Subcategory: Transistors
Technology: Si Width: 4 mm
Unit Weight: 0.019312 oz

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In Stock: 5,506

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $8.138 $8.14
230+ $3.247 $746.81
460+ $3.138 $1,443.48
1035+ $3.086 $3,194.01

The prices below are for reference only.

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