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IPB010N06NATMA1 +BOM

N-channel MOSFET with a 60-volt rating and 180-amp current capacity, packaged in D2PAK-6

Manufacturer:

INFINEON
Mfr.Part #:

IPB010N06NATMA1
Datasheet:

IPB010N06NATMA1 Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for IPB010N06NATMA1

IPB010N06NATMA1 General Description

In conclusion, the IPB010N06NATMA1 Power Field-Effect Transistor is a versatile and high-quality electronic component that delivers exceptional performance in a compact and reliable package. With its N-Channel design, Silicon technology, and environmentally friendly construction, this transistor is a smart choice for designers and engineers looking to optimize their systems for efficiency and longevity

Key Features

Optimized for Synchronous Rectification
35% lower RDS(on) than alternative devices
45% improvement of FOM over similar devices
Integrated Schottky-like diode
RoHS compliant - halogen free
MSL1 rated
Benefits
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot

Application

SWITCHING

Specifications

Source Content uid	IPB010N06NATMA1	Pbfree Code	No
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	1600 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	45 A
Drain-source On Resistance-Max	0.001 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263	JESD-30 Code	R-PSSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	300 W
Pulsed Drain Current-Max (IDM)	720 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	180 A
Rds On - Drain-Source Resistance	800 uOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.1 V	Qg - Gate Charge	243 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	300 W	Channel Mode	Enhancement
Tradename	OptiMOS	Series	OptiMOS 5
Fall Time	23 ns	Forward Transconductance - Min	160 S
Height	4.4 mm	Length	10 mm
Product	OptiMOS Power	Product Type	MOSFET
Rise Time	36 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	OptiMOS Power Transistor	Typical Turn-Off Delay Time	74 ns
Typical Turn-On Delay Time	37 ns	Width	9.25 mm
Part # Aliases	IPB010N06N SP000917410	Unit Weight	0.056438 oz