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IPP100N08N3GXKSA1 +BOM

MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3

IPP100N08N3GXKSA1 General Description

N-Channel 80 V 70A (Tc) 100W (Tc) Through Hole PG-TO220-3

Infineon Technologies Corporation Inventory

Key Features

  • Optimized technology for DC-DC converters
  • Excellent gate charge x R
  • DS(ON)
  • Superior thermal resistance
  • Dual sided cooling
  • Low parasitic inductance
  • Low profile (<0,7mm)
  • N-channel, normal level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series OptiMOS™
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 10mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 40 V
FET Feature - Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number IPP100 RHoS yes
PBFree yes HalogenFree yes

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IPP100N08N3GXKSA1 Datasheet PDF

Preliminary Specification IPP100N08N3GXKSA1 PDF Download

IPP100N08N3GXKSA1 PDF Preview

In Stock: 6,792

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