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IPP024N08NF2SAKMA1 +BOM

N-Channel 80 V 28A (Ta), 182A (Tc) 3.8W (Ta), 214W (Tc) Through Hole PG-TO220-3

IPP024N08NF2SAKMA1 General Description

N-Channel 80 V 28A (Ta), 182A (Tc) 3.8W (Ta), 214W (Tc) Through Hole PG-TO220-3

Infineon Technologies Corporation Inventory

Key Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low- switching frequency
  • Industry standard footprint through-hole package
  • High current rating
  • Capable of wave-soldering
  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing
Infineon Technologies Corporation Original Stock

Application

  • Power Management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
  • Light electric vehicles

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series StrongIRFET™ 2
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 182A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 139µA Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 40 V
FET Feature - Power Dissipation (Max) 3.8W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number IPP024N RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Current 182 A
Rds On - Drain-Source Resistance 2.4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.8 V Qg - Gate Charge 89 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 214 W Channel Mode Enhancement
Product Type MOSFET Factory Pack Quantity 1000
Subcategory MOSFETs Part # Aliases IPP024N08NF2S SP005548843

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IPP024N08NF2SAKMA1 Datasheet PDF

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