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N-Channel 80 V 28A (Ta), 182A (Tc) 3.8W (Ta), 214W (Tc) Through Hole PG-TO220-3
TO-220-3Manufacturer:
Mfr.Part #:
IPP024N08NF2SAKMA1
Datasheet:
Series:
StrongIRFET™ 2
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
80 V
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N-Channel 80 V 28A (Ta), 182A (Tc) 3.8W (Ta), 214W (Tc) Through Hole PG-TO220-3
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | StrongIRFET™ 2 |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V | Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 182A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 139µA | Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 6200 pF @ 40 V |
FET Feature | - | Power Dissipation (Max) | 3.8W (Ta), 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IPP024N | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 80 V | Id - Continuous Drain Current | 182 A |
Rds On - Drain-Source Resistance | 2.4 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3.8 V | Qg - Gate Charge | 89 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 214 W | Channel Mode | Enhancement |
Product Type | MOSFET | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Part # Aliases | IPP024N08NF2S SP005548843 |
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