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With its advanced design and specifications, the IPP320N20N3GXKSA1 offers superior performance and reliability in power management systems
TO-220-3Manufacturer:
Mfr.Part #:
IPP320N20N3GXKSA1
Datasheet:
RHoS:
yes
PBFree:
yes
HalogenFree:
yes
Series:
OptiMOS™
EDA/CAD Models:
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The IPP320N20N3GXKSA1 transistor is a high-performance N-Channel component with a single configuration, delivering a continuous drain current of 34A and supporting a drain-source voltage of 200V. Its low ON resistance of 32 mOhm ensures efficient power flow, while the gate-source voltage of 20V controls its operation effectively. This transistor boasts a fast fall time of 4ns and a rise time of 9ns, indicating quick switching capabilities. With a turn-OFF delay time of 21ns and a turn-ON delay time of 11ns, it demonstrates reliable performance in various applications. Operating temperature ranges from -55°C to 175°C, providing versatility for different environments. Packaged in a TO-220 format with 3 pins, this transistor is designed for easy through hole mounting and comes in a tube packaging for convenience. With a power dissipation of 136W, it is a robust choice for demanding applications
RHoS | yes | PBFree | yes |
HalogenFree | yes | Series | OptiMOS™ |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 32mOhm @ 34A, 10V |
Vgs(th) (Max) @ Id | 4V @ 90µA | Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 100 V |
Power Dissipation (Max) | 136W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Base Product Number | IPP320 |
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Perfect, fits well and good touch. Shipping very fast