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IPD50R380CEAUMA1 - MOSFET Tailored for Consumer Electronics
TO-252-3Manufacturer:
Mfr.Part #:
IPD50R380CEAUMA1
Datasheet:
Series:
CoolMOS™ CE
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
500 V
EDA/CAD Models:
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The IPD50R380CEAUMA1 from Infineon Technologies is a cutting-edge 500V CoolMOS™ C7 Gold superjunction MOSFET that revolutionizes power electronics. With a remarkable figure of merit and efficiency, this MOSFET is a game-changer in power conversion applications. Its 500V drain-source voltage and 12A continuous drain current capacity make it versatile for various high-power tasks. The ultra-low on-state resistance of 380mΩ and gate charge of 45nC enable swift switching and reduced power losses in demanding high-frequency scenarios. The robust TO-252 package ensures excellent thermal performance and reliability in challenging environments, while its compliance with lead-free manufacturing standards underscores its commitment to sustainability
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | CoolMOS™ CE |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500 V | Current - Continuous Drain (Id) @ 25°C | 14.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 13V | Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 260µA | Gate Charge (Qg) (Max) @ Vgs | 24.8 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 584 pF @ 100 V |
FET Feature | - | Power Dissipation (Max) | 98W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IPD50R | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 14.1 A |
Rds On - Drain-Source Resistance | 380 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 24.8 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 98 W | Channel Mode | Enhancement |
Tradename | CoolMOS | Configuration | Single |
Fall Time | 8.6 ns | Height | 2.3 mm |
Length | 6.5 mm | Moisture Sensitive | Yes |
Product Type | MOSFET | Rise Time | 5.6 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 7.2 n | Width | 6.22 mm |
Part # Aliases | IPD50R380CE SP001396790 | Unit Weight | 0.011640 oz |
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It's just fine... For 100r just a gift.