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Robust, high-power transistor with low RDS(on) suitable for power supply units, motor drives, and other high-current switching circuit
D2PAK 7pin (TO-263 7pin)Manufacturer:
Mfr.Part #:
IPB017N10N5LF
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Avalanche Energy Rating (Eas):
979 mJ
EDA/CAD Models:
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The IPB017N10N5LF OptiMOS™ Linear FET represents a new era in power semiconductor technology, offering a unique solution to the age-old challenge of balancing on-state resistance and linear mode capability. Through its innovative design and operation in the saturation region, this FET delivers exceptional performance that surpasses traditional trench and planar MOSFETs. By harnessing the benefits of both technologies, users can achieve optimal results in their power management applications
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 979 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 180 A |
Drain-source On Resistance-Max | 0.0017 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263 | JESD-30 Code | R-PSSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 313 W | Pulsed Drain Current-Max (IDM) | 720 A |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Element Material | SILICON |
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