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IPB017N10N5LFATMA1 +BOM

IPB017 Series 100 V 180A 313W N-Channel Surface Mount MOSFET TO263-7

Manufacturer:

INFINEON
Mfr.Part #:

IPB017N10N5LFATMA1
Datasheet:

IPB017N10N5LFATMA1 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for IPB017N10N5LFATMA1

IPB017N10N5LFATMA1 General Description

The IPB017N10N5LFATMA1 power MOSFET transistor is a robust and efficient solution for high-power applications. With a voltage rating of 100V and a continuous drain current of 100A, it is well-suited for demanding industrial motor control, high current switching, and power supply tasks. Its low on-resistance of 0.0017 ohms ensures effective power transfer and minimal power dissipation, making it an ideal choice for energy-efficient systems

Key Features

Precision temperature control
Extended operating range
Low noise operation

Application

Dynamic solar inverters
Efficient power management
High-performance robotics

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	53 Weeks, 1 Day
Avalanche Energy Rating (Eas)	979 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	180 A	Drain-source On Resistance-Max	0.0017 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263
JESD-30 Code	R-PSSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	313 W
Pulsed Drain Current-Max (IDM)	720 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Element Material	SILICON