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IPB019N08N3 G +BOM

MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3

IPB019N08N3 G General Description

N-Channel 80 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

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Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series OptiMOS™
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14200 pF @ 40 V
FET Feature - Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number IPB019

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Qty. Unit Price Ext. Price
1+ $6.859 $6.86
200+ $2.655 $531.00
500+ $2.562 $1,281.00
1000+ $2.515 $2,515.00

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