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IPB027N10N5ATMA1 +BOM
Power MOSFET, 120A current rating, 100V voltage, low 0.0027 ohm resistance, N-channel
TO-263-3-
Manufacturer:
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Mfr.Part #:
IPB027N10N5ATMA1
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Datasheet:
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Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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EDA/CAD Models:
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IPB027N10N5ATMA1 General Description
The IPB027N10N5ATMA1 stands out with a myriad of features tailored for modern power management needs. Optimized specifically for synchronous rectification, these MOSFETs shine in environments demanding high switching frequencies. Notably, they offer a remarkable reduction in output capacitance by up to 44%, alongside a substantial 43% decrease in RDS(on) compared to the previous generation. These enhancements translate into tangible benefits for system efficiency, switching and conduction losses reduction, minimized need for paralleling, heightened power density, and mitigated voltage overshoot
Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Extremely low on-resistance R DS(on)
- High current capability
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
Specifications
Pbfree Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Avalanche Energy Rating (Eas) | 461 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 120 A |
Drain-source On Resistance-Max | 0.0027 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263AB | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 480 A | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Series | OptiMOS™ |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 184µA | Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 50 V |
Power Dissipation (Max) | 250W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | IPB027 |
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In Stock: 4,159
Minimum Order: 1
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