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IPB033N10N5LFATMA1 +BOM

MOSFET Differentiated MOSFETs

Manufacturer:

INFINEON
Mfr.Part #:

IPB033N10N5LFATMA1
Datasheet:

IPB033N10N5LFATMA1 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for IPB033N10N5LFATMA1

IPB033N10N5LFATMA1 General Description

The gate threshold voltage of 2.5V on the IPB033N10N5LFATMA1 ensures seamless integration with standard driver circuits, making it a flexible option for various applications. Its low gate charge and input capacitance work together to reduce switching losses, ultimately improving efficiency in high-frequency switching scenarios. When efficiency and heat dissipation are top priorities, this MOSFET shines as a reliable and high-performing choice

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	52 Weeks
Avalanche Energy Rating (Eas)	273 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	23 A	Drain-source On Resistance-Max	0.0033 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	480 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Element Material	SILICON