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IPB036N12N3G +BOM

N-Channel 120 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

IPB036N12N3G General Description

Power Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN

Key Features

  • Ideal for high frequency switching and DC/DC converters
  • Excellent gate charge x R
  • product (FOM)
  • Very low on-resistance R
  • N-channel, normal level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant
  • Qualified according to JEDEC
  • for target applications
  • Halogen-free according to IEC61249-2-21

Specifications

IDpuls max 720.0 A Ptot max 300.0 W
VDS max 120.0 V Polarity N
RDS (on) max 3.6 mΩ ID max 180.0 A
VGS(th) max 4.0 V VGS(th) min 2.0 V
Operating Temperature max 175.0 °C Operating Temperature min -55.0 °C
Battery voltage 48-72 V

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