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IPD034N06N3G +BOM

Infineon IPD034N06N3G N-channel MOSFET Transistor, 100 A, 60 V, 3-Pin TO-252

Manufacturer:

INFINEON
Mfr.Part #:

IPD034N06N3G
Datasheet:

IPD034N06N3G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

compliant

IPD034N06N3G General Description

Infineon Technologies presents the IPD034N06N3G power MOSFET as a best-in-class offering within the OptiMOS™ 3 lineup, renowned for its high efficiency and superior performance characteristics. Delivering a maximum drain-source voltage of 60 volts, this MOSFET caters to the needs of a wide range of low to medium voltage applications, providing versatility and reliability in various power conversion scenarios. Its outstanding current handling capability, capable of supporting continuous drain currents up to 75 amperes, positions it as a top choice for high-power applications that prioritize performance and endurance. Featuring an impressively low on-resistance of just 3.4 milliohms at a gate-source voltage of 10 volts, the IPD034N06N3G ensures minimal power dissipation and optimal efficiency during switching activities. Additionally, with a gate charge of 40 nanocoulombs, this MOSFET demonstrates efficient and effective switching characteristics for seamless operation. Packaged in the convenient and efficient TO-252 (DPAK) form factor, this MOSFET strikes an ideal balance between thermal performance and ease of installation, making it a go-to component for demanding power conversion applications

Key Features

Ideal for high-frequency switching and sync. rec.
Optimized technology for DC/DC converters
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
N-channel; Normal level
100% Avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1) for target applications

Specifications

Source Content uid	IPD034N06N3G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	149 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	100 A	Drain-source On Resistance-Max	0.0034 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	167 W
Pulsed Drain Current-Max (IDM)	400 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON