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IPD082N10N3G +BOM

Advanced Transistor technology provides high switching speed, low noise, and excellent reliability for harsh environments

IPD082N10N3G General Description

MOSFET N Channel 100V 80A 3.5V @ 75uA 8.6mΩ @ 73A,10V TO-252-2(DPAK) RoHS

Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

VDS max 100.0 V Ptot max 125.0 W
IDpuls max 320.0 A RthJC max 1.2 K/W
RthJA max 62.0 K/W Polarity N
Mounting SMD RDS (on) max 8.2 mΩ
ID max 80.0 A VGS(th) max 3.5 V
VGS(th) min 2.0 V Operating Temperature max 175.0 °C
Operating Temperature min -55.0 °C

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In Stock: 5,381

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.805 $1.80
10+ $1.571 $15.71
30+ $1.426 $42.78
100+ $1.152 $115.20
500+ $1.086 $543.00
1000+ $1.057 $1,057.00

The prices below are for reference only.

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