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IPD200N15N3G +BOM

effect transistor with N-channel configuration, 50A current rating, 150V voltage rating, and 0.02ohm resistance

IPD200N15N3G General Description

N-Channel 150 V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3

Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21

Specifications

IDpuls max 200.0 A Ptot max 150.0 W
VDS max 150.0 V Polarity N
RDS (on) max 20.0 mΩ ID max 50.0 A
VGS(th) max 4.0 V VGS(th) min 2.0 V
Operating Temperature max 175.0 °C Operating Temperature min -55.0 °C
Series OptiMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1820 pF @ 75 V Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number IPD200N

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