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IPD30N06S2L-23 +BOM

Utilizing the IPD30N06S2L-23 in your applications

IPD30N06S2L-23 General Description

N-Channel 55 V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1091 pF @ 25 V
FET Feature - Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V Id - Continuous Drain Current 30 A
Rds On - Drain-Source Resistance 15.9 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 42 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 100 W Channel Mode Enhancement
Configuration Single Fall Time 9 ns
Height 2.3 mm Length 6.5 mm
Product Type MOSFET Rise Time 22 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 7 ns Width 6.22 mm
Part # Aliases SP000252168 IPD30N06S2L23ATMA1 Unit Weight 0.011640 oz

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In Stock: 6,250

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.033 $1.03
10+ $0.876 $8.76
30+ $0.789 $23.67
100+ $0.692 $69.20
500+ $0.649 $324.50
1000+ $0.630 $630.00

The prices below are for reference only.

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